WST2907 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION
◇ Collector Current Ic=600mA
◇ Complementary to WST2222/S
WST2907/S
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
3
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
2
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Collector Power Dissipation
PC
TO-92 :650
SOT-23(S):350
mW
Junction Temperature
Tj
150
℃
Storage Temperature
◇Mark Information
Tstg
-55~
+150
℃
2B
1
TO-92
1. Emitter
2. Base
3. Collector
3
12
◇Ordering Information
Device
Package
WST2907
TO-92
WST2907S
SOT-23
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
IC=-10㎂ ,IE=0
IC=-10mA ,IB=0
IE=-10㎂ ,IC=0
VCB=-50V ,IE=0
Min TYP MAX Unit
-60
V
-40
V
-5
V
-20 ㎁
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Transition Frequency
Turn on Time
Turn off Time
hFE VCE=-10V,IC=-10mA 75
VCE(sat)
VBE(sat)
IC=-150㎃, IB=-15㎃
IC=-500㎃, IB=-50㎃
IC=-150㎃, IB=-15㎃
IC=-500㎃, IB=-50㎃
Cob
fT
tON
tOFF
VCB=-10V,f=1MHZ
VCE=-20V, IC=-50㎃ 250
Vcc=-30V,Ic=-150mA,
IB1=-15mA
Vcc=-6V,Ic=-150mA,
IB1=IB2=15mA
-0.4 V
-1.6
-1.3 V
-2.6
8 PF
MHZ
45 ns
100 ns
JAN.2003 REV:01
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