WSA753 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE AMPLIFIER
◇ Low Speed Switching
◇ Complement to WSC752
WSA753
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
Characteristic
Symbol Value Unit
Collector-Base Voltage
VCBO -40
V
Collector-Emitter Voltage
VCEO -30
V
Emitter-Base voltage
VEBO
-5
V
Collector Current(DC)
IC
-2
A
Collector Current(Pulse)*
Ic
-7
A
Base Current
IB
Collector Power Dissipation(Tc=25℃) PC
Collector Power Dissipation(Ta=25℃) PC
Junction Temperature
Tj
Storage Temperature
Tstg
-0.6 A
15 W
1.2 W
150 ℃
-55~ _℃
+150
*PW≤ 10ms,Duty Cycle≤ 50%
L0sdn
3
12
1. Base
2. Collector
3. Emitter
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Test Condition
Ic=-100㎂ ,IE=0
Ic=-10mA, IB=0
Ic=-1mA ,IC=0
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
ICBO
IEBO
#hFE
VCB=-40V ,IE=0
VEB=-5V ,IC=0
VCE=-2V, IC=-500mA
*Collector-Emitter Saturation
Voltage
VCE(sat)(1) _{IC=-2.0A, IB=-200}㎃
VCE(sat)(2) ^IC^{=-1.5A, I}B^=-30㎃
Current Gain Bandwith Product
Output Capacitance
fT
VCE=-5V,IC=-500mA
Cob
VCB=-10V ,IE=0
f=1MHZ
* Pulse test:PW≤ 350us,Duty cycle≤ 2%
# hFE Classification:
Classification
O
hFE
100~200
Y
160~320
G
200~400
Min TYP MAX Unit
-40
V
-30
V
-5
V
-0.1 ㎂
-0.1 ㎂
100
400
-0.5 _-0.8
-2
V
120
MHZ
13
pF
JAN. 2003 REV:00
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