WS512K32NBV-15G2 Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – 512Kx32 3.3V SRAM MODULE

WS512K32BV-XXXE
512Kx32 3.3V SRAM MODULE PRELIMINARY*
FEATURES
s Access Times of 15^†, 17, 20ns
s MIL-STD-883 Compliant Devices Available
s Low Voltage Operation
s Packaging
• 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP
(Package 402)
• 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square
(Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ
footprint
s Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8
s Radiation Tolerant with Epitaxial Layer Die
s Commercial, Industrial and Military Temperature Ranges
s 3.3 Volt Power Supply
s BiCMOS
s TTL Compatible Inputs and Outputs
s Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
s Weight
WS512K32BV-XG2XE - 8 grams typical
WS512K32NBV-XH2XE - 13 grams typical
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
† This speed is Advanced information.
PIN CONFIGURATION FOR WS512K32NBV-XH2XE
TOP VIEW
4
PIN DESCRIPTION
1
12
23
I/O8
WE2
I/O15
I/O9
CS2
I/O14
I/O10
GND
I/O13
A13
I/O11
I/O12
A14
A10
OE
A15
A11
A18
A16
A12
WE1
A17
VCC
I/O7
I/O0
CS1
I/O6
I/O1
NC
I/O5
34
45
56
I/O24
VCC
I/O31
I/O25
CS4
I/O30
I/O26
WE4
I/O29
A6
I/O27
I/O28
A7
A3
A0
NC
A4
A1
A8
A5
A2
A9
WE3
I/O23
I/O16
CS3
I/O22
I/O17 GND
I/O21
I/O0-31
A0-18
WE1-4
CS1-4
OE
VCC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
OE
A0-18
BLOCK DIAGRAM
W E1C S 1
W E2 C S2
W E3 C S 3
W E 4C S4
512K x 8
512K x 8
512K x 8
512K x 8
I/O2
I/O3
I/O4
11
22
33
I/O18
I/O19
I/O20
44
55
66
8
I/O0-7
8
I/O8-15
8
I/O16-23
8
I/O24-31
February 1998
1
White Microelectronics • Phoenix, AZ • [phone]