UGF27025 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – 25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF27025
25W, 2.7 GHz, 28V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a
minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability
• Industry standard package
• Internally matched for repeatable manufacturing
• High gain, high efficiency and high linearity
• Integrated ESD Protection.
• Maximum gain and insertion phase flatness.
• Output load VSWR tolerance 10:1 all phase angles at
28V_DC, 2500MHz, 25W (CW) output power.
• Common source.
• Application Specific Performance, 2.7 GHz
• Typical 2-Tone Performance
Average Load Power – 12.5 W
η_D – 30%
Power Gain – 11.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
VDD – 28V
IDQ – 330mA
• Typical CW Performance
Average Load Power – 25 W
η_D – 38%
Power Gain – 11.0 dB
VDD – 28V
IDQ – 330mA
Package Type 440159
PN: UGF27025F
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Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1