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U63764 Datasheet, PDF (1/14 Pages) List of Unclassifed Manufacturers – CapStore 8K x 8 nvSRAM
Obsolete - Not Recommended for New Designs
U63764
CapStore 8K x 8 nvSRAM
Features
Description
• CMOS non- volatile static RAM The U63764 has two separate
8192 x 8 bits
modes of operation: SRAM mode
• 70 ns Access Time
and nonvolatile mode. In SRAM
• 35 ns Output Enable Access Time mode, the memory operates as an
•
•
ICC = 15 mA at 200 ns Cycle Time
Unlimited Read and Write Cycles
ordinary static RAM. In non-volatile
operation, data is transferred in
to SRAM
• Automatic STORE to EEPROM
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
on Power Down using charge
mode SRAM functions are disab-
stored in an integrated capacitor
• Software initiated STORE
• Automatic STORE Timing
• 105 STORE cycles to EEPROM
• 10 years data retention in
led.
The U63764 is a static RAM with a
non-volatile electrically erasable
PROM (EEPROM) element incor-
porated in each static memory cell.
EEPROM
• Automatic RECALL on Power Up
• Software RECALL Initiation
• Unlimited RECALL cycles from
The SRAM can be read and written
an unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
EEPROM
• Single 5 V ± 10 % Operation
• Operating temperature range:
from the SRAM to the EEPROM
(the STORE operation) take place
automatically upon power down
0 to 70 °C
using charge stored in an integra-
-40 to 85 °C
• QS 9000 Quality Standard
• ESD protection > 2000 V
ted capacitor. Transfers from the
EEPROM to the SRAM (the
RECALL operation) take place
(MIL STD 883C M3015.7)
• RoHS compliance and Pb- free
• Package: PDIP28 (600 mil)
automatically on power up. The
U63764 combines the ease of use
of an SRAM with nonvolatile data
integrity.
STORE cycles also may be initia-
ted under user control via a soft-
ware sequence.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or
write accesses intervene in the
sequence or the sequence will be
aborted.
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
The U63764 is pin compatible with
standard SRAMs and standard bat-
tery backed SRAMs.
Pin Configuration
Pin Description
n.c.
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
28
2
27
3
26
4
25
5
24
6
23
7
22
8 PDIP 21
9
20
10
19
11
18
12
17
13
16
14
15
VCC
W
n.c.
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
Top View
March 31, 2006
STK Control #ML0055
Signal Name
A0 - A12
DQ0 - DQ7
E
G
W
VCC
VSS
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
1
Rev 1.0