TPT5609 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TRANSISTOR (NPN)

TPT5609
TPT5609 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
1A
Collector-base voltage
V_(BR)CBO: 25 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=10µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=800mA, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
25
V
20
V
5
V
1
µA
1
µA
60
240
0.5 V
1
V
190
MHz
22
pF
CLASSIFICATION OF h_FE
Rank
Range
A
60-120
B
85-170
C
120-240
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