TCS800 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 800 Watts, 50 Volts, Pulsed Avionics 1030 MHz

R.-.061300
TCS800
800 Watts, 50 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 MHz, with the pulse
width and duty required for TCAS applications. The device has gold thin-film
metallization and diffused ballasting for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55SM Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C¹
1944 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
65 V
3.5 V
50 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +230 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
Power Out
P_in
Power Input
P_g
Power Gain
η_c
Collector Efficiency
R_L
Input Return Loss
Pd
Pulse Droop
VSWR
Load Mismatch Tolerance
TEST CONDITIONS
F = 1030 MHz
V_CC = 50 Volts
PW = 32 µsec
DF = 1%
F = 1030 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo*
Emitter to Base Breakdown
BV_ces
Collector to Emitter Breakdown
h_FE*
DC – Current Gain
θjc¹
Thermal Resistance
NOTE 1: At rated output power and pulse conditions.
*: Not measureable due to internal EB returns
Ie = 70 mA
Ic = 100 mA
Vce = 5V, Ic = 5A
MIN TYP MAX UNITS
800
W
120 W
8.0 9.0
dB
45
%
-12
dB
0.5
dB
4:1
3.5
V
65
V
20
0.09 °C/W
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