TC1101 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Low Noise and Medium Power GaAs FETs

TRANSCOM
TC1101
Low Noise and Medium Power GaAs FETs
January 2002
FEATURES
• Low Noise Figure:
NF = 0.5 dB Typical at 12 GHz
PHOTO ENLARGEMENT
• High Associated Gain:
Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
1 dB Compression Power P_-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BV_DGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested
DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All
bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
NF
G_a
P_1dB
G_L
I_DSS
g_m
V_P
BV_DGO
R_th
Noise Figure at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
Associated Gain at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
Output Power at 1dB Gain Compression Point , f = 12GHz
V_DS = 4 V, I_DS = 25 mA
Linear Power Gain, f = 12GHz
V_DS = 4 V, I_DS = 25 mA
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 0.32 mA
Drain-Gate Breakdown Voltage at I_DGO =0.08 mA
Thermal Resistance
MIN
TYP
MAX
0.5
0.7
10
12
17
18
12
14
40
55
-1.0
9
12
90
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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