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TBS6416B4E Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – 1M x 16Bit x 4 Banks synchronous DRAM | |||
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M.tec
1M x 16Bit x 4 Banks synchronous DRAM
TBS6416B4E
GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with Mâtec high performance CMOS technology. Synchronous design allows precise cycle control with the use of
system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and
programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system
applications.
FEATURES
⢠JEDEC standard 3.3V power supply
⢠LVTTL compatible with multiplexed address
⢠Four-banks operation
⢠MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
⢠All inputs are sampled at the positive going edge of the system clock.
⢠Burst read single-bit write operation
⢠DQM for masking
⢠Auto & self refresh
⢠64ms refresh period (4K cycle)
ORDERING INFORMATION
Part No.
TBS6416B4E-7G
Max Freq.
143MHz
Interface
LVTTL
Package
54
TSOP(II)
Revision_1.1
1 TwinMOS Technologies Inc. Sep. 2000
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