TAN350 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

R.-.101199
TAN 350
350 Watts, 50 Volts, Pulsed
Avionics 960 – 1215 MHz
GENERAL DESCRIPTION
The TAN 350 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55ST Style 1
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25!C (P_d)
1450 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
65 V
2.0 V
40 A
Temperatures
Storage Temperature
-65 to +200 !C
Operating Junction Temperature +230 !C
ELECTRICAL CHARACTERISTICS @ 25!C
SYMBOL CHARACTERISTICS
P_out
P_in
P_g
#_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 960 – 1215 MHz
V_CC = 50 Volts
PW = 10 "sec
DF = 10%
F = 1090 MHz
FUNCTIONAL CHARACTERISTICS @ 25!C
BV_ebo
BV_ces
h_FE
$jc²
Emitter to Base Breakdown
Collector to Emitter
Breakdown
DC – Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 50 mA
Ic = 1A, Vce = 5V
MIN TYP MAX UNITS
350
W
70
W
7.0 7.5
dB
38 40
%
3:1
2.0
65
10
.12
V
V
!C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120