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| STS20NHS3LL Datasheet, PDF (1/9 Pages) List of Unclassifed Manufacturers – N-CHANNEL 30 V - 0.0032 Ω - 20 A SO-8 STripFET™III MOSFET PLUS MONOLITHIC SCHOTTKY | |||
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STS20NHS3LL
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VGS
Gate- source Voltage
ID(1)
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(2) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Table 4: Thermal Data
Rthj-amb (3) Thermal Resistance Junction-ambient Max
Tj
Maximum Operating Junction Temperature
Tstg
Storage Temperature
Table 5: Avalanche Characteristics
Symbol
Parameter
IAV
Not-Repetitive Avalanche Current
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25°C, ID = IAV, VDD = 24V)
Value
30
± 18
20
12.6
80
2.7
47
-55 to 150
-55 to 150
Max Value
12.5
1.3
Unit
V
V
A
A
A
W
°C/W
°C
°C
Unit
A
J
ELECTRICAL CHARACTERISTICS (TJ =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 24V
500
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 18V
±100
nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 1mA
1
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 10A
0.0032 0.004
â¦
0.004
0.0055
â¦
Table 7: Dynamic
Symbol
Parameter
gfs (4) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS=15V, ID = 12A
VDS = 25V, f = 1MHz,
VGS = 0
Min.
Typ.
30
3950
720
70
Max.
Unit
S
pF
pF
pF
2/9
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