SSM9930M Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – DUAL N-AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM9930M
DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE
POWER MOSFETS
Simple drive requirement
Low on-resistance
Full-bridge applications, such as
P2G
N2D/P2D
P1S/P2S
P1G
LCD monitor inverter
SO-8
Description
N-CH
N2G
N1S/N2S
N1D/P1D
N1G
P-CH
BV _DSS
R _DS(ON)
I_D
BV _DSS
R_DS(ON)
I_D
30V
33mΩ
6.3A
-30V
55mΩ
-5.1A
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
P1S
P2S
P1G
P2G
The SSM9930M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for applications such as low-voltage inverters and motor drives.
P1N1D
P2N2D
Absolute Maximum Ratings
N1G
N1S
N2S
N2G
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
30
-30
± 25
±25
6.3
-5.1
4.2
-3.4
20
-20
2.0
0.016
V
V
A
A
A
W
W/°C
T_STG
Storage Temperature Range
-55 to 150
°C
T_J
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
°C/W
10/21/2004 Rev.1.01
www.SiliconStandard.com
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