SSM01N60J Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM01N60H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
Simple drive requirement
Description
D
G
S
BV_DSS
R _DS(ON)
I_D
600V
8Ω
1.6A
The SSM01N60H is supplied in the industry-standard TO-252
package, which is widely preferred for commercial and industrial
surface mount applications, and is well suited for AC/DC converters. The
through-hole version (SSM01N60J) is available for low-footprint applications.
GD
S
TO-252 (H)
G
DS
TO-251 (J)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D @ T_C=25°C
I_D @ T_C=100°C
I_DM
P_D @ T_C=25°C
E_AS
I_AR
E_AR
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 30
1.6
1
6
39
0.31
13
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/ °C
mJ
A
mJ
°C
°C
Max.
Max.
Value
3.2
110
Unit
°C/W
°C/W
Rev.2.02 4/06/2004
www.SiliconStandard.com
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