SNA-586 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description
Stanford Microdevices’ SNA-586 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband performance
up to 5 GHz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression of
intermodulation products. Typical IP3 at 850 MHz with 65mA is
32.5 dBm.
SNA-586
PPrreelilmimininaarryy
DC-5 GHz, Cascadable
GaAs HBT MMIC Amplifier
NGA-586 Recommended for New Designs
These unconditionally stable amplifiers provide 18 dB of gain and
18.4 dBm of 1dB compressed power and require only a single
positive voltage supply. Only 2 DC-blocking capacitors, a bias
resistor and an optional inductor are needed for operation. This
MMIC is an ideal choice for wireless applications such as
cellular, PCS, CDPD, wireless data and SONET.
25 ^{Small Signal Gain vs. Frequency @ ID=65mA}
20
dB ₁₅
10
5
0
2
4
6
8
Frequency GHz
Product Features
• High Output IP3: 32.5 dBm @ 850 MHz
• Cascadable 50 Ohm Gain Block
• Patented GaAs HBT Technology
• Operates From Single Supply
Applications
• Cellular, PCS, CDPD, Wireless Data, SONET
Electrical Specifications
Symbol
Parameters: Test Conditions:
Z₀ = 50 Ohms, I_D = 65^Gm^HA^z, T = 25°C
P_1dB
Output Power at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
Units
dBm
dBm
dBm
Min.
Typ.
17.6
18.4
18.4
Max.
IP₃
Third Order Intercept Point
Power out per tone = 0 dBm
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
32.5
31.6
31.6
S₂₁
Small Signal Gain
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dB
17.6
dB
dB
19.6
18.1
17.4
Bandwidth
S₁₁
S₂₂
(Determined by S₁₁, S₂₂ Values)
Input VSWR
Output VSWR
S₁₂
Reverse Isolation
f = DC-5000 MHz
f = DC-5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
MHz
-
-
dB
dB
dB
5000
1.4:1
1.4:1
22.3
21.6
21.3
NF
Noise Figure, Z_S = 50 Ohms
f = 1950 MHz
dB
4.0
V_D
Device Voltage
V
4.4
4.9
5.4
Rth,j-l Thermal Resistance (junction - lead)
o _C/W
254
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1
EDS-101397 Rev A