SNA-200S Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – DC-6.5 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description
Sirenza Microdevices’ SNA-200 is a GaAs monolithic
broadband amplifier (MMIC) in die form. At 1950 MHz, this
amplifier provides 15.5dB and 13.8dB at 6000 MHz.
SNA-200S
DC-6.5 GHz, Cascadable
GaAs HBT MMIC Amplifier
These unconditionally stable amplifiers are designed for use as
general purpose 50 ohm gain blocks. Its small size (0.350m x
0.345mm) and gold metallization make it an ideal choice for
use in hybrid circuits. The SNA-200 is 100% DC tested and
sample tested for RF performance.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
The SNA-200 is supplied in gel paks at 100 devices per pak.
Also available in packaged form (SNA-276 & SNA-286)
Output Power vs. Frequency
14
13
dBm
12
11
10
0.5
1
1.5
2
4
6
8
10
GHz
Product Features
• Cascadable 50 Ohm Gain Block
• 15.5dB Gain, +12dBm P1dB
• 1.5:1 Input and Output VSWR
• Operates From Single Supply
• Through wafer via for ground
Applications
• Broadband Driver Amplifier
• IF Amplifier or gain stage for VSAT, LMDS,
WLAN, and Cellular Systems
Symbol
Parameter
Units Frequency Min. Typ. Max.
dB
850 MHz
15.5
G_p Small Signal Power Gain [2]
dB
1950 MHz 13.5
15.0
16.5
dB
2400 MHz
15.0
dB
6000 MHz 12.3
13.8
15.3
G_F Gain Ripple
BW3dB 3dB Bandwidth
dB 0.1-4.0 GHz
GHz
+/- 1.0
7
P_1dB Output Power at 1dB Compression [2]
dBm 1950 MHz
10
12.0
dBm 6000 MHz 10.2
12.2
OIP₃ Output Third Order Intercept Point [2]
dBm 1950 MHz
22
25.0
dBm 6000 MHz 21.5
24.5
NF Noise Figure
dB
1950 MHz
5.5
RL Input / Output Return Loss
dB
1950
12.9
ISOL Reverse Isolation
dB 0.1-7.0 GHz
20
V_D Device Operating Voltage [1]
V
3.1
3.6
4.1
I_D Device Operating Current [1]
dG/dT Device Gain Temperature Coefficient
mA
dB/°C
35
40
45
-0.0018
R_TH, j-b Thermal Resistance (junction to backside) °C/W
270
Test Conditions:
V_S = 8 V
R_BIAS = 110 Ohms
I_D = 40 mA Typ.
OIP₃ Tone Spacing = 1.2 MHz, Pout per tone = 0 dBm
T_L = 25ºC, Z_S = Z_L = 50 Ohms, [1] 100% DC Tested, [2] Sample Tested
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103300 Rev B