SMT850N.pdf Datasheet, PDF (1/1 Pages) –

SMT850N High Performance Infrared TOP IR LED
SMT850N consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 20mW typical of output power.
It emits a spectral band of radiation at 850nm.
Outer dimension (Unit: mm)
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
TOP IR LED
SMT850N
AlGaAs
0.4mm*0.4mm
850nm typ.
Silver Plated
PPA Resin
Epoxy Resin
Electro-Optical Characteristics [Ta=25°C]
Item
Symbol Maximum Rated Value Unit Ambient Temperature
Power Dissipation
PD
160
mW
Ta=25°C
Forward Current
IF
100
mA
Ta=25°C
Pulse Forward Current
IFP
1,000
mA
Ta=25°C
Reverse Voltage
VR
5
V
Ta=25°C
Operating Temperature
TOPR
-20 ~ +80
°C
Storage Temperature
TSTG
-30 ~ +80
°C
Soldering Temperature
TSOL
240
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C
Electro-Optical Characteristics [Ta=25°C]
Item
Symbol
Condition
Minimum
Forward Voltage
VF
IF=50mA DC
IF=100mA, tp=20ms
Reverse Current
IR
VR=5V
Total Radiated Power PO
IF=50mA DC
IF=100mA, tp=20ms
15.0
Radiant Intensity
IE
IF=50mA DC
IF=100mA, tp=20ms
Peak Wavelength
P
IF=50mA DC
840
Half Width
IF=50mA DC
Viewing Half Angle
IF=50mA DC
Rise Time
tr
IF=50mA DC
Fall Time
tf
IF=50mA DC
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.45
1.50
20.0
40.0
10
20
850
40
±55
15
10
Maximum Unit
1.60
V
1.8
10
uA
mW
mW/sr
860
nm
nm
deg.
ns
ns
Marubeni America Corporation
3945 Freedom Circle, Suite 1000, Santa Clara, CA 95054
408-330-0650 (Ext. 323), 408-330-0655 (Fax), [e-mail]