SMT810 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – High Performance Infrared TOP IR LED

SMT810 High Performance Infrared TOP IR LED
SMT810 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 10mW typical of output power.
It emits a spectral band of radiation at 810nm.
♦Outer dimension（Unit:mm）
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
TOP IR LED
SMT810
AlGaAs
810ｎｍ ｔｙｐ.
Silver Plated
PPA Resin
Epoxy Resin
♦Absolute Maximum Rating
Item
Symbol Maximum Rated Value Unit Ambient Temperature
Power Dissipation
PD
190
mW
Ta=25°C
Forward Current
IF
100
mA
Ta=25°C
Pulse Forward Current
IFP
500
mA
Ta=25°C
Reverse Voltage
VR
5
V
Ta=25°C
Operating Temperature
TOPR
-20 ~ +80
°C
Storage Temperature
TSTG
-30 ~ +80
°C
Soldering Temperature
TSOL
240
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C
♦Electro-Optical Characteristics [Ta=25°C]
Item
Symbol Condition Minimum
Forward Voltage
VF
IF=50mA
Reverse Current
IR
VR=5V
Total Radiated Power
PO
IF=50mA
5.0
Radiant Intensity
IE
IF=50mA
3.0
Peak Wavelength
λP
IF=50mA
Half Width
Δλ IF=50mA
Viewing Half Angle
θ 1/2 IF=50mA
Rise Time
tr
ＩF=50mA
Fall Time
tf
ＩF=50mA
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.60
10.0
6.0
810
40
±55
60
40
Maximum
1.80
10
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
Marubeni America Corporation
3945 Freedom Circle, Suite 1000, Santa Clara, CA 95054
408-330-0650 (Ext. 323), 408-330-0655 (Fax), [e-mail]