SMT735 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – High Performance Infrared TOP IR LED

epitex Opto-Device & Custom LED
TOP IR LED SMT735
SMT735 High Performance Infrared TOP IR LED
SMT735 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 10mW typical of output power.
It emits a spectral band of radiation at 735nm.
Outer dimension(Unit:mm)
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
TOP IR LED
SMT735
AlGaAs
735nm typ.
Silver Plated
PPA Resin
Epoxy Resin
Absolute Maximum Rating
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol Maximum Rated Value Unit Ambient Temperature
PD
100
mW
Ta=25°C
IF
50
mA
Ta=25°C
IFP
200
mA
Ta=25°C
VR
5
V
Ta=25°C
TOPR
-20 ~ +80
°C
TSTG
-30 ~ +80
°C
TSOL
240
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
Electro-Optical Characteristics [Ta=25°C]
Item
Symbol Condition Minimum
Forward Voltage
VF
IF=50mA
Reverse Current
IR
VR=5V
Total Radiated Power
PO IF=50mA
5.0
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
IE
IF=50mA
2.0
lP
IF=50mA
Dl IF=50mA
Q1/2 IF=50mA
Rise Time
tr
IF=50mA
Fall Time
tf
IF=50mA
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.90
10.0
5.0
735
20
±55
80
80
Maximum
2.30
10
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
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