SHF-0289 Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – DC-3 GHz, 1.0 Watt GaAs HFET

Product Description
Stanford Microdevices’ SHF-0289 series is a high performance
GaAs Heterostructure FET housed in a low-cost surface-mount
plastic package. HFET technology improves breakdown voltage
while minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
SHF-0289
DC-3 GHz, 1.0 Watt
GaAs HFET
PPrreelilmimininaarryy
Output power at 1dB compression for the SHF-0289 is +30dBm
when biased for Class AB operation at 8V and 250mA. The
+46 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. They are well suited
for use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Adequate heat sinking must be provided for this part to avoid
exceeding the maximum junction temperature. Methods include
the use of screws near the device, and filled vias beneath the
part to the ground plane. Refer to “Mounting and Thermal
Considerations” section on page 7 for more information.
Maximum Available Gain vs Frequency
Vds = 8V, Idq = 250mA
30
25
20
Product Features
• Patented GaAs Heterostructure FET
Technology
• +30dBm Output Power at 1dB Compression
• +46dBm Output IP3
• High Drain Efficiency: Up to 40% at Class AB
• 13 dB Gain at 900MHz (Application circuit)
• 13 dB Gain at 1900MHz (Application circuit)
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Frequency (GHz)
Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
Electrical Specifications at Ta = 25^o C
Symbol
Parameters: Test Conditions
Units
Min.
Typ.
Max.
|S₂₁| ²
G_max
TOIP
Insertion Power Gain
Vds = 8.0V, I dq= 250mA, Z_S=Z_L=50 Ohms
Maximum Available Gain
Vds = 8.0V, I dq= 250mA, Z_S=Z_{S OPT}, Z_L=Z_{L OPT}
Output Third Order Intercept Point
(Device is tuned for maximum power output)
f = 0.9 GHz
f = 1.9 GHz
dB
17.7
12.5
f = 0.9 GHz
f = 1.9 GHz
dB
23
20
f = 0.9 GHz
dBm
46
f = 1.9 GHz
dBm
46
I _Dss
Saturated Drain Current
Vds = 3.0V, Vgs= 0V
mA
650
G_m
Tranconductance:
Vds = 3.0V, Vgs = 0V
mS
375
Vp
Pinch-Off Voltage:
Vds = 2.0V, I d = 1.2mA
V
-2.7
-1.9
-1.0
V_bgs
Gate-to-Source Breakdown Voltage, Igs = 2.4mA
V_bgd
Gate-to-Drain Breakdown Voltage, Igd = 2.4mA
Rth
Thermal Resistance, junction-to-lead
V
V
o_C/W
-22
-17
-22
-17
37
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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EDS-101241 Rev A