SGA-8343 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Low Noise, High Gain SiGe HBT

Product Description
Stanford Microdevices’ SGA-8343 is a high performance SiGe
HBT amplifier designed for operation from DC to 6 GHz. This RF
device uses the latest Silicon Germanium Heterostructure Bipolar
Transistor (SiGe HBT) process. The SGA-8343 is optimized
for 3V operation but can be biased at 2V for low-voltage battery
operated systems. The device is easily matched as Γ_OPT is
very close to 50 ohms. This device provides high gain, low NF,
and excellent linearity at a low cost.
PPrerelilmimininaaryry
SGA-8343
Low Noise, High Gain SiGe HBT
40
35
30
25
20
15
10
5
0
0
Typical Gain Performance
F_MIN
Gain
Gmax
1234567
Frequency (GHz)
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
8
Product Features
• 6 GHz Useful Bandwidth
• Low F_MIN:
0.9 dB @ 0.9 GHz
1.1 dB @ 1.9 GHz
• High Gain (Gmax): 24 dB @ 0.9 GHz
19 dB @ 1.9 GHz
• Easily Matched with |Γ_OPT| = 0.17 @ 1.9 GHz
• OIP3 = +28.5 dBm, P1dB = +13 dBm
• Low Cost High Performance SiGe HBT
Applications
• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
• Oscillators
Symbol
G_MAX
Device Characteristics, T = 25ºC
V_CE=3V, I_CQ=10mA (unless otherwise noted)
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
Units
Min.
dB
Typ.
23.9
19.3
17.7
Max.
S₂₁
Insertion Gain
Z_S=Z_L=50Ω
f = 0.9 GHz
21.8
f = 1.9 GHz
dB
16.3
f = 2.4 GHz
14.3
F_min
Minimum Noise Figure
Z_S=Γ_OPT, Z_L=Z_LOPT
f = 0.9 GHz
0.9
f = 1.9 GHz
dB
1.1
f = 2.4 GHz
1.2
P1dB
Output 1 dB compression point
Z_S=Z_SOPT, Z_L=Z_LOPT
V_CE=2V, I_CQ=20 mA
V_CE=3V, I_CQ=20 mA
dBm
10.0
13.3
OIP₃
Output Third Order Intercept Point
Z_S=Z_SOPT, Z_L=Z_LOPT
V_CE=2V, I_CQ=20 mA
V_CE=3V, I_CQ=20 mA
dBm
24.0
28.5
h_FE
DC Current Gain
120
180
300
BV_CEO Collector - Emitter Breakdown Voltage
V
5.7
6.0
Rth Thermal Resistance (junction to lead)
ºC/W
200
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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EDS-101845 Rev. A