SGA-6389 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – DC-4000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

Product Description
Stanford Microdevices’ SGA-6389 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high F_T and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the SGA-6389 typically provides +35.2 dBm output
IP3, 15.7 dB of gain, and +20.2 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @T_L=+25°C
16
GAIN
14
12
ORL
10
IRL
8
6
0
1
2
3
4
Frequency (GHz)
0
-6
-12
-18
-24
-30
-36
5
SGA-6389
DC-4000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
• High Gain : 14.0 dB at 1950 MHz
• Cascadable 50ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular, PCS, CDPD
• Wireless Data, SONET
• Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G
Small Signal Gain
dB
850 MHz
14.1 15.7 17.3
dB
1950 MHz
14.0
dB
2400 MHz
13.3
P_1dB Output Power at 1dB Compression
dBm
dBm
850 MHz
1950 MHz
20.2
18.9
OIP₃
Output Third Order Intercept Point
(Power out per tone = 0dBm)
dBm
dBm
850 MHz
1950 MHz
35.2
32.6
Bandwidth Determined by Return Loss (<-10dB)
MHz
4000
IRL Input Return Loss
dB
1950 MHz
16.0
ORL Output Return Loss
dB
1950 MHz
11.9
NF Noise Figure
dB
1950 MHz
4.2
V_D
Device Voltage
R_Th
Thermal Resistance
Test Conditions:
V_S = 8v
R_BIAS = 39 ohms
I_D = 80mA Typ.
T_L = 25ºC
V
4.5 4.9
5.3
97
IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z_S = Z_L = 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100620 Rev. C