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SFD60N03L Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – Logic N-Channel MOSFET
SFD60N03L
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature coef-
ficient
ID = 250uA, referenced to 25 °C
IDSS Drain-Source Leakage Current
VDS = 30V, VGS = 0V
VDS = 24V, TC = 125 °C
IGSS
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
On Characteristics
30
-
-
V
-
0.02
-
V/°C
-
-
1
uA
-
-
10
uA
-
-
100
nA
-
-
-100
nA
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
VDS = VGS, ID = 250uA
VGS = 10 V, ID = 24A
VGS = 5 V, ID = 24A
1.0
-
3.0
V
-
-
0.0116 0.0135
0.0146 0.0190
Ω
Ciss
Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer Capacitance
Dynamic Characteristics
VGS =0 V, VDS =25V, f = 1MHz
-
1010 1320
-
450 585
pF
-
130 170
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
-
VDD =15V, ID =30A, RG =50Ω
-
※ see fig. 13.
-
(Note 4, 5)
-
-
VDS =24V, VGS =5V, ID =60A
-
Qgd
Gate-Drain Charge(Miller Charge)
※ see fig. 12.
(Note 4, 5)
-
20
50
55
120
ns
50
110
75
160
21.5
28
3.6
-
nC
10.7
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =48A, VGS =0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=60A,VGS=0V,dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 115uH, IAS =48A, VDD = 15V, RG = 0Ω , Starting TJ = 25°C
3. ISD ≤ 60A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
40
35
Max.
48
192
1.5
-
-
Unit.
A
V
ns
nC
2/7
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