SBT10K45WS Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Small-Signal Schottky Barrier Diodes

Silicon-Based Technology Corp.
Small-Signal Schottky Barrier Diodes
SBT10K45WS Series
SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT^®) developed by
Silicon-Based Technology Corporation, which exhibit high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
Features and Advantages:
Low forward voltage drop(V_F)
Low reverse leakage current (I_R)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high reliability
Electrical Characteristics : (@T_A=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage
(Note 2)
Forward Voltage (Note 2)
Reverse Current (Note 2)
Total Capacitance
Symbol Min. Typ. Max. Unit Test Conditions
V_(BR)R
V_FM
I_RM
C_T
45
-
-
- I_R=100 A
-
350 380 mV I_F=10mA
- 0.07 0.5
A V_R=10V
-
6.0
-
pF V_R=10V, f=1.0MH_Z
SBT Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C
Tel [phone]
Fax [phone]