SBR20A40CTF Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SUPER BARRIER RECTIFIER

SBR20A40CTF-prel
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Characteristics
Values
I_F(AV) Rectangular Waveform
20
V_RRM
V_F@10A, Tj=125^oC
40
0.41
Tj(operating/storage)
-65 to 175
Units
A
V
V, typ
o_C
ELECTRICAL:
* Ultra Low Forward Voltage Drop
* High Thermal SBR Reliability
* Reliable High Temperature Operation
* Super Barrier Design
* Softest, fast switching capability
* 175^oC Operating Junction Temperature
Common
1 ^{2 Cathode}
3
Anode
Anode
Device optimized for low forward voltage drop
to maximize efficiency in Power Supply applications
MECHANICAL:
* Molded Plastic ITO-220 package
Maximum Ratings and Electrical Characteristics
(at 25^oC unless otherwise specified)
SYMBOL
DC Blocking Voltage
V_RM
Working Peak Reverse Voltage
V_RWM
40
Peak Repetitive Reverse Voltage
V_RRM
RMS Reverse Voltage
V_R(RMS)
40
Average Rectified Forward Current
(Rated V_R-20Khz Square Wave)-50% duty cycle
I_O
20
Peak Forward Surge Current - 1/2 60hz
I_FSM
180
Peak Repetitive Reverse Surge Current
(2uS-2Khz)
I_RRM
3
UNITS
Volts
Volts
Amps
Amps
Amps
Instantaneous Forward Voltage (per leg)
Typ
I_F = 10A; T_J = 25^OC
I_F = 20A; T_J = 25^OC
0.44
V_F
0.56
I_F = 10A; T_J= 125^oC
0.41
Max
0.48
0.60
Volts
0.45
Maximum Reverse Current at Rated V_RM
T_J = 25^OC
I_R*
T_J = 125^OC
Maximum Rate of Voltage Change (at Rated V_R)
dv/dt
Maximum Thermal Resistance JC
Rθ_JC
Operating and Storage Junction Temperature
T_J
NOTE: Dice are available for customer applications.
* Pulse width < 300 uS, Duty cycle < 2%
Typ
Max
.22
1
20
100
10,000
2
-65 to +175
mA
mA
V/uS
O_C/W
O_C
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5/3/05
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