S9016 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9016 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
0.3 W (Tamb=25℃)
Collector current
I_CM:
0.025 A
Collector-base voltage
V_(BR)CBO:
30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
30
Collector-emitter breakdown voltage V(BR)CEO
Ic= o.1mA, IB=0
20
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
Collector cut-off current
ICBO
VCB= 30V, IE=0
Emitter cut-off current
IEBO
VEB= 3V, IC=0
DC current gain
hFE(1)
VCE=5V, IC= 1mA
28
Collector-emitter saturation voltage
VCE(sat)
IC= 10mA, IB= 1mA
MAX
0.1
0.1
270
0.3
UNIT
V
V
V
µA
µA
V
Transition frequency
fT
VCE= 5V, IC= 1mA
f =100MHz
300
MHz
CLASSIFICATION OF h_FE(1)
Rank
D
Range
28-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270