RT240PD Datasheet, PDF (1/10 Pages) List of Unclassifed Manufacturers – Preliminary 10W Power Transistor

Preliminary 10W
Power Transistor
RT240PD
Product Features
• High Output Power
P1dB = 40dBm(Typ.)@2.14GHz
• High Efficiency
• High Power Gain
G1dB = 17dB(Typ.)@900MHz
G1dB = 13dB(Typ.)@2.14GHz
• High Linearity
• Hermetically sealed package
• GaN HFET
Application
• Repeater
• RF Sub-Systems
• Base Station
• Converter
• IMT-2000
• ISM
• MMDS
• Wi-Fi, Wi-max
Description
The RT240PD is designed for base stations and cell extenders as cellular
and GSM, PCS, IMT-2000, ISM, MMDS, Wi-Fi, Wi-MAX frequency systems,
GaN HFET is used and attached on a gold sub carrier.
z Typical Specifications
Parameter
Specifications
Frequency (MHz)
900
1800
2140
2640
3500
Small Signal Gain (dB)
17
14
13
12
10
VSWR (Input / Output)
2.0 : 1
1dB Compression Point (dBm)
40
39
*_{CDMA Power (1FA) (dBm)}
33
33
*_{CDMA Power (7FA) (dBm)}
29
29
Vdd / Ids (CDMA Only)
**_{WCDMA Power (1FA) (dBm)}
**_{WCDMA Power (2FA) (dBm)}
**_{WCDMA Power (4FA) (dBm)}
+28V / 600mA
31
28
26
OIP3 (dBm)
50 @ 27dBm/tone
48 @ 27dBm/tone
Operating Temp Range
-25℃ ~ +70℃
* IS-95 ( ±750kHz offset@-29dBc ACPR, ±1.98MHz offset@-39dBc ACPR )
** Test Model 1ch/64DPCH ( ±5MHz offset@-45dBc ACLR, ±10MHz offset@-50dBc ACLR )
z All specifications may change without notice.
z www.rfhic.com