RMM2080 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 2-18 GHz Wideband Variable-Gain Driver Amplifier

RMM2080
2-18 GHz Wideband Variable-Gain
Driver Amplifier
PRODUCT INFORMATION
Description
The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control
capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating
GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per
stage and to facilitate gain control (4x125µm & 4x250µm). The third stage is a 3-cell distributed dual-gate FET
amplifier designed for high output power and efficiency (3x500µm). The RMM2080 amplifier is designed for
interconnection with microstrip transmission media using fully automatic assembly techniques.
Features
2-18 GHz Bandwidth
24 dB Typical Gain
±2 dB Gain Flatness
20 dBm Output Power Typical
Three Stages of Distributed Amplification
Gain Control of up to 70 dB range
Dual-Gate Ion-Implanted 0.5 µm FETs
Chip Size: 4.14mm x 3.22mm x 0.1mm
Absolute
Maximum
Ratings
Parameter
Positive Drain DC Voltage (+7V typ)
Negative DC Voltage
Simultaneous (Vd-Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(channel to backside)
Symbol
Vd
Vg
Vgd
Id
P_IN(CW)
T_case
T_storage
R_jc
Value
+8
-2
10
400
+8
-30 to 85
-55 to 125
22
Unit
V
V
V
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C)
50 Ω system,
Vd=+7 V,
Quiescent current (Idq)
=300 mA
GC1, GC2= +1.5 V
Parameter
Frequency Range
Gate Supply Voltage (Vg)¹
RF Output Power @ -1 dBc
Small Signal Gain
Gain Flatness vs. Freq.
Input/Output Return Loss
Min Typ Max Unit
2
-
18 GHz
-0.7
Volts
20
dBm
18
24
dB
±2
dB
7
dB
Parameter
Gain Control Range
Gain Control Voltage,
GC1&2²
Min Typ
70
-5
Max Unit
dB
+1.5 Volts
www.raytheonrf.com
Notes:
1. Typical range of the negative gate voltage is -0.9 to 0.0V to set typical Idq of 300 mA.
2. GC1 and GC2 of +1.5V and VG23=open corresponds to maximum gain and power.
Characteristic performance data and specifications are subject to change without notice.
Revised January 25, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810