RMLA3565A-58 Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – Wideband Low Noise MMIC Amplifier

RMLA3565A-58
Wideband Low Noise MMIC Amplifier
Description
PRODUCT INFORMATION
The Raytheon RMLA3565A-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz
frequency range. The MMIC requires no external matching circuits or external gate bias supply. This device uses
Raytheon’s advanced 0.25 µm PHEMT process to provide low noise, high linearity, and low current.
Features
19.0 dB Gain typical
1.2 dB Noise Figure Typical 5.0 - 6.5 GHz
Single Positive Bias
Small Outline Metal Base Quad Plastic Package
Internal 50Ω Matching
(Photo TBS)
Absolute
Maximum
Ratings¹
Parameter
Positive Drain DC Voltage (No RF)
RF Input Power (from 50Ω source)
Drain Current
Case Operating Temperature
Storage Temperature Range
Soldering Temperature
Symbol
Vdd
Pin(CW)
Idd
Tc
Tstg
Tsolder
Value
Unit
6.5
V
0
dBm
130
mA
-35 to 85
°C
-40 to 110
°C
220
°C
Electrical
Characteristics²
Parameter
Min
Frequency Range
3.5
Gain (Small Signal)^3,4
17.0
Gain Variation vs Temp
Noise Figure⁴
3.5 - 5 GHz
5 - 6.5 GHz
Power Out, P1dB @ 5.5 GHz 8.0
Typ
19.0
-0.008
1.4
1.2
10.0
Max Unit
6.5 GHz
dB
dB/°C
1.9 dB
1.4 dB
dBm
Parameter
Min Typ Max Unit
OIP3 @ 5.5 GHz, +3 dBm
Pout total
17 21.0
dBm
Idd
70.0 85.0 mA
Vdd
3.0 4.0 6.0
V
Input Return Loss
-15.0
dB
Output Return Loss
-10.0
dB
Thermal Resistance Rjc
(Channel to Case)
135
°C/W
www.raytheonrf.com
Notes:
1. No permanent damage with only one parameter set at maximum limit and all other parameters at typical conditions.
2. All parameters met at Tc = +25 °C, Vdd = 4.0V.
3. Pin = -20 dBm, Vdd = 4.0 V, Frequency 3.5 - 6.5 GHz
4. Data de-embedded from fixture loss
Characteristic performance data and specifications are subject to change without notice.
Revised March 28, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810