RMDA1840 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – 18-40 GHz Broad Band Driver Amplifier MMIC

Description
Features
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
RMDA1840 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of
applications, such as a driver amplifier or a frequency multiplier.
4 mil substrate
Small-signal gain 22 dB (typ.)
Pout 1 dB comp 23 dBm (typ.)
Chip size 4.67 mm x 2.00 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+5 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_stg
R_JC
Value
+6
-2
+8
442
+15
-30 to +85
-55 to +125
53
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C),
50 Ω system,
Vd = +5 V,
Quiescent
Current
Idq = 400 mA
Parameter
Min
Frequency Range
18
Gate Supply Voltage (Vg)¹
Gain Small Signal at
Pin = -5 dBm
20
Gain Variation vs
Frequency
Gain at 1dB Compression
Power Output at 1 dB
Compression
Typ
-0.2
22
+/-2.5
21
23
Max Unit
40 GHz
V
dB
dB
dB
dBm
Parameter
Min Typ Max Unit
Power Output Saturated:
Pin = +3 dBm
21
24
dBm
Power Added Efficiency
(PAE): at P1dB
15
%
Input Return Loss
(Pin = -5 dBm)
8
dB
Output Return Loss
(Pin = -5 dBm)
10
dB
www.raytheon.com/micro
Notes:
1. Typical range of gate voltage is -1.0 to 0 V to set Idq of 400 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised January 15, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810