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| RLT1060-100GS Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – High Power Infrared Laser Diode | |||
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ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT1060-100GS TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: single mode
Lasing wavelength: typ. 1060 nm
Optical power: 100 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Photodiode cathode
2) Laser diode cathode and photodiode anode
3) Laser diode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
120
1.5
10
-20 .. +40
-40 .. +70
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Emitting Aperture
A
cw
Optical Output Power
Po
Threshold Current
Ith
Operation Current
Iop
Forward Voltage
Uf
Lasing Wavelength
λp
Spectral Width FWHM
âλ
single mode
cw
Po = 100 mW
Po = 100 mW
Po = 100 mW
Po = 100 mW
Beam Divergence
Beam Divergence
Monitor Current
θ//
Po = 100 mW
θâ¥
Po = 100 mW
Im
Po = 100 mW
MIN
25
220
1062
0.9
TYP
1x5
100
30
250
1.8
1064
0.2
25
40
1.0
MAX
35
280
1.9
1067
0.3
1.1
UNIT
µm²
mW
mA
mA
V
nm
nm
°
°
mA
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