RLT1020-500G Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Power Infrared Laserdiode

ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: [phone] FAX: [phone]
e-mail: [e-mail] http://www.roithner-laser.com
RLT1020-500G TECHNICAL DATA
High Power Infrared Laserdiode
Structure: InGaAs quantum well
Lasing wavelength: 1020 nm typ., multimode
Max. optical power: 600 mW, 1 x 100 µm² aperture
Package: 9 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
P_o
V_R(LD)
V_R(PD)
T_C
T_{S T G}
RATING
600
2
30
-40 .. +50
-70 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Optical Output Power
Threshold Current
Operation Current
Operation Voltage
Lasing Wavelength
Spectral Width FWHM
Beam Divergence
Beam Divergence
Differential Efficiency
Monitor Current
P_o
I_th
I_op
U_op
λ_p
∆λ
θ_//
θ_⊥
dP_o/dI_op
I_m
P_o = 500 mW
P_o = 500 mW
P_o = 500 mW
P_o = 500 mW
P_o = 500 mW
P_o = 500 mW
P_o = 500 mW
P_o = 500 mW
500
mW
300 350 mA
790 820 mA
1.5 1.6
V
990 1020 1040 nm
10
nm
7 10 13
°
15 30 35
°
0.4 0.7 1.0 mW/mA
150 350 600 µA