RJN1164 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Junction FET

N-Channel Junction FET
RJN1164
Electret Capacitor Microphone Applications
Features
Specially suited for use in audio and
telephone electret capacitor microphones
Excellent voltage gain
Very low noise
High ESD voltage
Ultra-small size package
Applications
Cellular phones
Portable audio
PDAs
MP3 players
Package Type : SOT-400
1.60±0.05
[unit:mm]
0.31±0.03
0.15±0.03
3
0~0.02
1
0.21±0.03
0.5±0.05
2
0.21±0.03
0.5±0.05
MAX 0.42
[TOP VIEW]
[SIDE VIEW]
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings at Ta = 25 ^oC
Parameter
Symbol
Ratings
Unit
Gate-to-Drain Voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain Current
ID
10
mA
Allowable Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
o_C
Storage Temperature
Tstg
-55 to +150
o_C
Electrical Characteristics at Ta = 25 ^oC
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDO
VGS(off)
IDSS
|yfs|
Ciss
Crss
Conditions
IG = -100µA
VDS = 5V, ID = 1µA
VDS = 5V, VGS = 0
VDS = 5V, VGS = 0, f = 1kHz
VDS = 5V, VGS = 0, f = 1MHz
VDS = 5V, VGS = 0, f = 1MHz
Ratings
Min Typ Max
Unit
-20
V
-0.2 -0.6 -1.5
V
70*
430* µA
0.4 1.2
mS
3.5
pF
0.8
pF
* The RJN1164 is classified by IDSS as follows
Classification
A1
IDSS(µA)
70~120
A2
100~170
B
150~270
C
210~350
D
320~430
RFsemi Technologies, Inc.
Rev. 6