PS0.25-5 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed epitaxy Low Dark curren 0.25mm active area

PS0.25-5 TO52S1
PIN Photodiode
Special characteristics:
High Speed epitaxy
Low Dark current
0,25 mm² active area
Parameters:
Active Area
Dark Current
at 20 V
Total Capacitance
at 20 V
Spectral Responsivity
at 800 nm
Shunt Resistance
at 10 mV
Cut-off Frequency ¹⁾
(-3dB)
Rise Time ¹⁾
at 20 V
N.E.P.
at 0 V
at 20 V
Operating temperature
Storage temperature
1) measurement conditions:
Λ = 860 nm
RL = 50 Ω
UR = 20 V
PS0.25-5 Ch
0.5 x 0.5 mm
0,25 mm²
max. 4.0 nA
typ. 0.5 nA
typ. 1.8 pF
min. 0.4 A/W
typ. 0.5 A/W
typ. 200 MΩ
typ. 0.9 GHz
typ. 0.4 ns
typ. 2* 10^-15 W/Hz^1/2
typ. 6* 10^-15 W/Hz^1/2
-20 ……. + 70 °C
-25 ……. +100 °C
Package 1 (TO52):
CASE
CATHODE
45°
4
3
1
∅ 2.54
∅ 5.4 ± 0.2
∅ 4.7 ± 0.1
∅ 2.5 ± 0.05 ¹⁾
∅ 2.0 min. ²⁾
ANODE
Chip: PS0.25-5
3
view without window cap
Ansicht ohne Fensterkappe
∅ 0.45
1
4
1): ∅ 3.0 ± 0.05
2): ∅ 2.2 min.
3): 0.25 ± 0.05
www.silicon-sensor.com
Version: 04-03-05
www.pacific-sensor.com