PJD882 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN Epitaxial Silicon Transistor

PJD882/PJD882S
NPN Epitaxial Silicon Transistor
AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING
• Complement to PJB772
• PW10ms,Duty Cycle50%Pulse Test
• PW350µ s, Duty Cycle 2%
T O-92
T O-126
ABSOLUTE MAXIMUM RATINGS (T a = 25 ℃)
Characteristic
Symbol Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage VCEO
30
V
Emitter-Bias Voltage
VEBO
5
V
Collector Current (DC)
IC
3
A
*Collector Current (Pulse)
IC
7
A
Base Current (DC)
IB
0.6
A
Collector Dissipation
PC
10
W
(T a=25℃)
P_C
1
W
Collector Dissipation
Tj
150
℃
(T a=25℃)
Tstg -55~150
℃
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS(T a=25℃)
Pin : 1.Emitter
2.Collector
3.Base
ORDERING INFORMATION
Device
PJD882CT
PJD882CK
Operating Temperature
-20℃～+85℃
Package
T O-92
T O-126
Characteristics
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
hFE(2) CLASSIFICATION
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
Test condition
VCB=30V,IE=0
VEB=3V,IC=0
VCE=2V,IC=20mA
VCE=2V,IC=1A
IC=2A,IB=0.2A
IC=2A,IB=0.2A
VCE=5V,IC=0.1A
VCB=10V,IE=0
f=1MHz
Classification
hFE(2)
R
60-120
O
100-200
Y
160-320
G
200-400
Min
Typ
Min
Unit
1
µA
1
µA
30
150
60
160
400
0.3
0.5
V
1.0
2.0
V
90
MHz
45
pF
1-3
2002/01.rev.A