PJC945 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN Epitaxial Silicon Transistor

PJC945
NPN Epitaxial Silicon Transistor
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OS C.
• Complement to PJA733
• Excellent DC Current Gain Linearly 0.1mA to 50mA
• Low Output Capacitance Cob=2.5PF(Typ.) @VCB
=6V,f=1MHz
• Low Noise Figure NF=2.5dB(TYP.) IC =0.1mA,VCE =
6V Rg= 2KΩ,f=1KHz
• DC Current Gain Selection Available
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Rating
Symbol Rating Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
120
mA
Total Device Dissipation
PD
PD
Junction Temperature
Tj
450
mW
1.2
W
150
°C
Storage Temperature
T stg
-55 ~150
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
TO-92
SOT-23
P in : 1. Emitter
2. Colletor
3. Base
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJC945CT
PJC945CX
Operating Temperature
-20℃～+85℃
Package
T O-92
SOT -23
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current-Gain-Bandwidth Product
Output Capacitance
Noise Figure
hFE (2) CLASSIFICATION
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICEO
hFE(1)
hFE(2)
VCE (SAT)
VBE (SAT)
VBE (on)
fT
COb
NF
Test Condition
Ic = 10µA, IE = 0
Ic =1.0mA, IB =0
IE = ^_10µA, IC = 0
VCB= 45V,IE=0
VEB=3V,IC=0
VCE=40V,IB=0
VCE=6V,Ic=0.1 mA
VCE=6V,Ic=1.0 mA
IC=10mA,IB=1mA
IC=10mA,IB=1mA
IC=0.1mA,VCE=6V
VCE=6V,IC=10mA
VCB=6V,IE=0
f=1MHZ
VCE=6V,IE= ^_0.5mA
f=1KHZ,Rs=2KΩ
Classification
hFE(2)
R
70-140
P
120-240
Q
200-400
K
350-700
Min Typ Max
80
50
5
0.1
0.1
1
50
70
70
0.09 0.3
0.81
1
0.55 0.6 0.65
150 250 450
2.5
5
2.5
15
Unit
V
V
V
µA
µA
µA
V
V
V
MHz
pF
dB
1-2
2002/01.rev.A