PJB772 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – PNP Epitaxial Silicon Transistor

AUDIO FREQ UENCY POWER AMPLIFIER
LOW SPEED SWITCHING
• Complement to PJD882
• PW10µs,Duty Cycle50%
• Pulse Test PW350µs,Duty Cycle2%
PJB772/PJB772S
PNP Epitaxial Silicon Transistor
TO-92
TO-126
ABSOLUTE MAXIMUM RATINGS (T a = 25℃ )
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Bias Voltage
VEBO
-5
V
Collector Current (DC)
IC
-2
A
*Collector Current (Pulse)
IC
-5
A
Base Current (DC)
IB
-0.6
A
Collector Dissipation (Ta=25℃) P_C
-
W
Collector Dissipation (Tc=25℃)
P_C
1
W
Junction Temperature
Storage Temperature
Tj
150
℃
T stg
-
℃
55~150
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
P in : 1.Emitter
2.Collector
3.Base
ORDERING INFORMATION
Device
PJB772SCT
PJB772CK
Operating Temperature
-20℃～+85℃
Package
T O-92
T O-126
Characteristics
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation
Voltage
*Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
hFE(2) CLASSIFICATION
Classification
R
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
NF
Test condition
VCB=-30V,IE=0
VEB=-3V,IC=0
VCE=-2V,IC=-20mA
VCE=-2V,IC=-1A
IC=-2A,IB=-0.2A
IC=-2A,IB=-0.2A
VCE=-5V,IC=0.1A
VCB=-10V,IE=0
f=1MHz
VCE=10V,IC=1mA
RS=10K,f=1KHz
O
Y
G
Min
Typ
Max
Unit
-1
µA
-1
µA
30
220
60
160
400
-0.3
-0.45
V
-1.0
-2.0
V
80
MHz
55
pF
4
dB
hFE(2)
60-120 100-200 160-320
200-400
1-3
2002/01.rev.A