PJ2N9014 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN Epitaxial Silicon Transistor

PJ2N9014
NPN Epitaxial Silicon Transistor
PRE-APLIFIER, LOW LEVEL&LOW NOISE
• High total power dissipation (PT=450mW)
• High hFE and good linearity
• Complementary to PJ2N9015
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (T a= 25 °C)
Rating
Symbol Value Uint
Collector Base Voltage
VCBO
50
V
Collector Emitter Voltage
VCEO
45
V
Emitter Base Voltage
VEBO
5
V
Collector Current
Ic
100
mA
Collector Dissipation
Pc
450
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg -55 ~150 °C
ELECTRICAL CHARACTERISTICS (T a= 25 °C)
P in : 1. Emitter
2. Base
3. Collector
P in : 1. Base
2.Emitter
3.Collector
ORDERING INFORMATION
Device
PJ2N9014CT
PJ2N9014CX
Operating Temperature
-20℃～+85℃
Package
T O-92
SOT -23
C h aracte ri s ti c
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Produce
Noise Figure
h_EF CLASSIFICATION
S y m bo l
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(ON)
Cob
fT
NF
Te st Conditions
IC= 100μA , IE=0
IC= 1mA , IB=0
IE=100μA , IC=0
VCB= 50V , IE = 0
VEB= 5V , IC=0
VEB= 5V, IC =1 mA
IC= 100 mA , IB=5mA
IC= 100mA , IB=5mA
VCE =5V, Ic =2 mA
VCB =10V, IE =0
f=1MHz
VCE =5V, Ic =10 mA
VCE =5V, Ic =0.2 mA
f=1KHz,Rs=2KΩ
Mi n
50
45
5
60
0.58
150
Typ Max Unit
V
V
V
50
nA
50
nA
280 1000
0.14
0.3
V
0.84
1.0
V
0.63
0.7
V
2.2
3.5
pF
270
MHz
0.9
10
dB
Classification
HFE
A
60-150
B
100-300
C
200-600
D
400-1000
1-3
2002/01.rev.A