PH1617-30 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz

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r=
an AMP comDanv
Wireless Bipolar
1.6 - 1.7 GHz
Power Transistor,
30W
PHI 617-30
Features
l Designed for Linear Amplifier Applications
l -30 dBc Typ 3rd IMD at 30 Watts PEP
l Common Emitter Class AB Operation
l Internal Input Impedance Matching
l Diffused Emitter Ballasting
-I
.225?k010
(5.72i.25)
r ,400
<lO.l6)-
Absolute Maximum Ratings at 25°C
Parameter
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
Symbol
V _CSC
V _CES
V _EBD
‘c
pcl
?
T _STG
8 _JC
Rating
60
60
3.0
10
109
200
-55 to +150
1.6
Electrical Characteristics at 25°C
Units
V
V
V
A
w
“C
“C
“CM,
.225&O
(5.72i.25)
It+CHES tO’J5’
UNLESS OTHERWISE NOTED, TOLERANCES ARE cHILUHETERS tJ3nH,
Parameter
Collector-Emitter Breakdown Voltaae
~olle%-Emitter
Leakage Current
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltaae
DC Forward Current Gain
Power Gain
Collector Efficiencv
I Input Return Loss
Load Mismatch Tolerance
3rd Order IMD
Symbol
Min
Max Units
Test Conditions
BV,,,
60
-
V I,=40 mA
I LFP I - ^{) 4.0 1 mA 1 V,,=25V}
I
BV,,,
20
-
V I,=40 mA
BV,,,
30
-
V I,=40 mA, F&=220 R
BV,,,
3.0
-
V I,=40 mA
15
120
- V,,=5 V, I,=2 A
10
-
dB V,,=25 V, I,,=200 mA, P,,,=30 W PEP, F=l.6, 1.65,1.70 GHz
40
-
% VP,=25 V, I,,=200 mA, P,,,,=30 W PEP, F=l.6, 1.651.70 GHz
1 RL 1 10 1 - 1 dB 1 V-,=25 V, I,,=200 mA. P-,.,=30 W PEP, F=1.6, 1.65, 1.70GHz
1
VSWR-T
-
3.0:1
-
V,,=25 V, I,,=200 mA, P,,,=30 W PEP, F=l.6, 1.65, 1.70 GHz
‘MD,
-
-28
dBc V,,=25 V, I,,=020 mA, P,,,=30 W PEP, F=l650 MHz, 4F=lOO kHz
Typical Optimum Device Impedances
F(GHz)
1.60
1.65
z,,w
2.1 + j4.9
3.1 + j3.8
Z,,m(~)
1.3-j0.7
1.2 - j0.8
1.70
2.1 +j3.5
1.2 - j0.9
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