PFM19030 Datasheet, PDF (1/15 Pages) List of Unclassifed Manufacturers – 1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

PFM19030 SPECIFICATION
1930-1990 MHz, 30W, 2-Stage Power Module
Enhancement-Mode Lateral MOSFETs
This versatile PCS module provides excellent linearity and efficiency in a
low-cost surface mount package. The PFM19030 includes two stages of _{Package Type: Surface Mount}
amplification, along with internal sense FETs that are on the same silicon
die as the RF devices. These thermally coupled sense FETs simplify the
PN: PFM19030SM
task of bias temperature compensation of the overall amplifier. The module
includes RF input, interstage, and output matching elements. The source
and load impedances required for optimum operation of the module are
much higher (and simpler to realize) than for unmatched Si LDMOS
transistors of similar performance.
The surface mount package base is typically soldered to a conventional
PCB pad with an array of via holes for grounding and thermal sinking
of the module. Optimized internal construction supports low FET
channel temperature for reliable operation.
Package Type: Flange
PN: PFM19030F
• 28 dB Gain
• 30 Watts Peak Output Power
• Internal Sense FETs
(for improved bias control)
• IS95 CDMA Performance
5 Watts Average Output Level
20% Power Added Efficiency
–49 dBc ACPR
Module Schematic Diagram
Gate 1
RF IN ^Lead
Module Substrate
Q1 Die Carrier
Q1
Input
Match
Output
Match
Q2 Die Carrier
Q2
Input
Match
Output
Match
Drain 2
RF OUT
Lead
S2
S1
Sense S1 Lead
Gate 2 Lead
Sense S2 Lead
D1
Lead
Note: Additionally, there are 250 KOhm resistors connected in shunt with all leads, to enhance ESD protection.
Page 1 of 15 Specifications subject to change without notice. U.S. Patent No. 6,822,321
http://www.cree.com/
Rev. 2