P2504BDG Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary )

NIKO-SEM
N-Channel Logic Level Enhancement _P2504BDG
Mode Field Effect Transistor ( Preliminary )
TO-252 (DPAK)
Lead-Free
D
PRODUCT SUMMARY
V_(BR)DSS
R_DS(ON)
40V
25m
I_D
12A
G
S
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 100 °C
Power Dissipation
T_C = 25 °C
T_C = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (¹/₁₆” from case for 10 sec.)
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
T_L
1. GATE
2. DRAIN
3. SOURCE
LIMITS
40
±20
12
10
45
41
32
-55 to 150
275
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R_θJc
3
°C / W
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1}
75
°C / W
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current¹
Drain-Source On-State Resistance¹
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(ON)
R_DS(ON)
STATIC
V_GS = 0V, I_D = 250µA
V_DS = V_GS, I_D = 250µA
V_DS = 0V, V_GS = ±20V
V_DS = 32V, V_GS = 0V
V_DS = 30V, V_GS = 0V, T_C = 125 °C
V_DS = 10V, V_GS = 10V
V_GS = 4.5V, I_D = 10A
V_GS = 10V, I_D = 12A
LIMITS
UNIT
MIN TYP MAX
40
V
1 2.0 3.0
±250 nA
1
µA
10
45
A
35 45
m
21 25
1
JAN-17-2005