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| P1402CDG Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Logic Level Enhancement Mode Field Effect Transistor | |||
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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P1402CDG
TO-252 (DPAK)
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20
14mƸ
ID
45A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16â from case for 10 sec.)
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ⤠1Ä
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±12
45
30
140
48
20
-55 to 150
275
UNITS
V
A
W
°C
MAXIMUM
2.6
110
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
20
V
0.45 0.75 1.25
VDS = 0V, VGS = ±12V
±100 nA
VDS = 16V, VGS = 0V
VDS = 13.2V, VGS = 0V, TJ = 125 °C
1
µA
10
VDS = 5V, VGS = 4.5V
45
A
VGS = 2.5V, ID = 9A
VGS = 5V, ID = 18A
18 26 mƸ
11 14
VDS = 10V, ID = 18A
26
S
1
NOV-05-2004
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