P1103BVG Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P1103BVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V_(BR)DSS
R_DS(ON)
30
11mƸ
I_D
11A
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
Power Dissipation
Junction & Storage Temperature Range
T_C = 25 °C
T_C = 90 °C
T_C = 25 °C
T_C = 90 °C
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
G : GATE
D : DRAIN
S : SOURCE
LIMITS
30
±20
11
12
100
2.5
3.0
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
TYPICAL
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance¹
Forward Transconductance¹
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
R_DS(ON)
g_fs
STATIC
V_GS = 0V, I_D = 250µA
V_DS = V_GS, I_D = 250µA
V_DS = 0V, V_GS = ±20V
V_DS = 24V, V_GS = 0V
V_DS = 20V, V_GS = 0V, T_J = 55 °C
V_GS = 4.5V, I_D = 10A
V_GS = 10V, I_D = 11A
V_DS = 15V, I_D = 10A
LIMITS
UNIT
MIN TYP MAX
30
V
1 1.5 2.5
±100 nA
1
µA
10
13 16.5
9 11 ^mƸ
38
S
1
SEP-22-2004