P07D03LV Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Dual N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM
Dual N-Channel Enhancement Mode
Field Effect Transistor
P07D03LV
SOP-8
PRODUCT SUMMARY
V_(BR)DSS
R_DS(ON)
I_D
30
20mΩ
7A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 70 °C
Power Dissipation
T_C = 25 °C
T_C = 70 °C
Junction & Storage Temperature Range
Lead Temperature (¹/₁₆” from case for 10 sec.)
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
T_L
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
TYPICAL
LIMITS
±30
±20
7
6
40
2
1.3
-55 to 150
275
UNITS
V
V
A
W
°C
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current¹
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(ON)
STATIC
V_GS = 0V, I_D = 250µA
V_DS = V_GS, I_D = 250µA
V_DS = 0V, V_GS = ±20V
V_DS = 24V, V_GS = 0V
V_DS = 20V, V_GS = 0V, T_J = 55 °C
V_DS = 5V, V_GS = 10V
LIMITS
UNIT
MIN TYP MAX
30
V
0.7 1 1.4
±100 nA
1
µA
10
25
A
1
OCT-14-2002