OT410D Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN Silicon Phototransistor

NPN Silicon Phototransistor
Type OT 410D and OT 410T
The OT410 sensors consist
of a high gain NPN silicon
photo transistor mounted in
hermetically sealed TO-46
package. These sensors are
ideally suited for hostile
environment operation. The
OT410D features a domed
lens and the OT410T a flat
window.
• ^{TO - 46 Package}
• ^{Hermetically Sealed Device ideal for hostile}
environments
• ^{High Sensitivity}
Specifications:
Operating Temperature Range
Dimensions in mm
-55°C to 125°C
PARAMETERS
SYMBOL MIN. TYP MAX.
Light Current
H = 1mW/cm2
OT 410D(T)-1
OT 410D(T)-2
OT 410D(T)-3
I _C(ON)
3 (1.5)
5 (2)
12 (4)
15 (6)
Dark Current VCE = 10V, H = 0
Collector Emitter Voltage
Emitter Collector Voltage
Saturation Voltage IC = 1mA
Angular Response
OT 410D
I _CED
V _CED
35
V _ECD
6
V _CE(SAT)
40
0.50
20
OT 410T
Φ
80
Rise or Fall Time
OT 410D-1
6
RL = 100Ω VCC = 10V OT 410D-6
tr, tf
8
UNITS
mA
mA
mA
nA
V
V
V
Deg.
Deg.
µS
µS
Rhopoint Components Ltd
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