|
OPE5T87 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed GaAlAs Infrared Emitter | |||
|
High Speed GaAlAs Infrared Emitter C
OPE5T87
C
The OPE5T87 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS (Unit : mm)
FEATURES
⢠Ultra high-speed : 25ns rise time
⢠880nm wavelength
⢠Narrow beam angle
⢠Low forward voltage
⢠High power and high reliability
⢠Available for pulse operating
APPLICATIONS
⢠Emitter of IrDA
⢠IR Audio and Telephone
⢠High speed IR communication
⢠IR LANs
⢠Available for wireless digital data transmission
2- 0.5
2.54
Cathode
Anode
Tolerance : ±0.2mm
STORAGE
⢠Condition : 5°C~35°C,R.H.60%
⢠Terms : within 3 months from production date
⢠Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGSC C
C
CCCCCCCCCCCCCCCCC(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
PDC
150
C
Forward current
IFC
100
EC
Pulse forward current CCCCCC
1 Reverse voltage
IFPC
VRC
1.0
4.0
AC
C
Operating temp.
Topr.
-25~ +85
°CC
Soldering temp. CCCCCCCCCCCCCCCÊ2 Tsol.
260.
°CC
Ê1.Duty ratio = 1/100, pulse width=0.1ms.
Ê2.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol Conditions Min.
Forward voltage
Reverse current
Capacitance
VFC
IF=50 EC
IRC
VR=4VC
C
Ct
f=1 C
C
Radiant intensity
Peak emission wavelength
Ie
IF=50 EC
50
pC
IF=50 EC
C
Spectral bandwidth 50%
Half angle
C
IF=50 C
C
IF=50 C
C
Optical rise & fall time(10%~90%)
tr/tf
IF=50 C
C
Cut off frequency
*3
fc
*3. 10logPo(fc MHz)/Po(0.1 MHz)=-3
IFʺʲD ECEEC
ʮDD EC ʰ C
C
C
15
Typ.
1.5
C
20
120
880
45
±8
25/15
14
(Ta=25°C)
Max. Unit
2.0
V
10
µEC
C
C
/
C
C
C
C
C
deg.
C
ns
C
MHz
|
▷ |