OPE5885 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – DHigh Speed GaAlAs Infrared Emitter

DHigh Speed GaAlAs Infrared Emitter
OPE5885
The OPE5885 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 package
and has medium beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS (Unit : mm)
3.0
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Medium beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2- 0.5
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
CCCCCC
P_DC
I_FC
I_FPC
V_RC
Topr.
80
60
0.5
4.0
-20~ +70
Soldering temp. ^{CCCCCCCCCCCCCCCÊ­2} Tsol.
240.
Ê­1_{.Duty ratio = 1/100, pulse width=0.1ms.}
Ê­2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
(Ta=25)
Unit
C
EC
AC
C
°CC
°CC
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
V_FC
Reverse current
I_RC
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p^C
Spectral bandwidth 50%
C
Half angle

Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3
fc
*3_{. 10logPo(fc MHz)/Po(0.1 MHz)=-3}
Conditions
I_F=50 EC
V_R=4VC
f=1 C
I_F=50 EC
I_F=50 EC
I_F=50 C
I_F=40 C
I_F=50 C
I_FʺʲD ECEEC
ʮDD EC ʰ C
Min.
C
C
20
C
C
C
C
C
Typ.
1.5
C
20
40
850
45
±17
25/13
14
(Ta=25)
Max. Unit
2.0
V
10
µEC
C
C
/
C
C
C
C
C
deg.
C
ns
C
MHz
9