OPE5687HP Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed GaAIAs Infrared Emitter

High Speed GaAlAs Infrared Emitter
OPE5687HP
The OPE5687HP is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS (Unit : mm)
FEATURES
• Ultra high-speed : 25ns rise time
• 880nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2-□0.5
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
P_D
150
mW
Forward current
I_F
100
mA
Pulse forward current ^*1
I_FP
1.0
A
Reverse voltage
V_R
4.0
V
Operating temp.
Topr.
-25~ +85
°C
Soldering temp.
*2
Tsol.
260.
°C
*1_{.Duty ratio = 1/100, pulse width=0.1ms.}
*2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol
Forward voltage
V_F
Reverse current
I_R
Capacitance
Ct
Radiant intensity
Ie
Power
Po
Peak emission wavelength
λ_p
Spectral bandwidth 50%
∆λ
Half angle
∆θ
Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3
fc
Conditions
I_F=50mA
V_R=4V
f=1MHz
I_F=50mA
I_F=100mA
I_F=50mA
I_F=50
I_F=50
I_F=50
I_F=50mA DC
+10mA p-p
(Ta=25°C)
Min. Typ.
1.5
20
25
50
20
35
880
45
±22
25/15
14
Max. Unit
2.0
V
10
µA
mW/
mW
nm
nm
deg.
ns
MHz