OPE5685 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed GaAlAs Infrared Emitter

High Speed GaAlAs Infrared Emitter
OPE5685
The OPE5685 is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage
and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS (Unit : mm)
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
2- 0.5
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
P_D
150
Forward current
I_F
100
Pulse forward current
*1 _{Reverse voltage}
I_FP
1.0
V_R
4.0
Operating temp.
Topr.
-25~ +85
Soldering temp.
*2 _Tsol.
260.
*1_{.Duty ratio = 1/100, pulse width=0.1ms.}
*2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
(Ta=25°C)
Unit
MW
MA
A
V
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
V_F
Reverse current
I_R
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
λp
Spectral bandwidth 50%
∆λ
Half angle
∆θ
Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3
fc
*3_{. 10logPo(fc MHz)/Po(0.1 MHz)=-3}
Conditions
I_F=50mA
V_R=4V
f=1MHz
I_F=50mA
I_F=50mA
I_F=50mA
I_F=50mA
I_F=50mA
I_{F+=1500mmAApD-pC}
Min.
Typ.
1.5
20
50
850
45
±22
25/13
14
(Ta=25°C)
Max. Unit
2.0
V
10
µA
pF
mW/sr
nm
nm
deg.
ns
MHz
7