OPE5585 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed GaAlAs Infrared Emitter

High Speed GaAlAs Infrared Emitter
OPE5585
The OPE5585 is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage
and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS (Unit : mm)
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
2- 0.5
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
Forward current
P_DC
150
I_FC
100
Pulse forward current ^CCCCÊ­DC
I_FPC
1.0
Reverse voltage
Operating temp.
V_RC
Topr.
4.0
-25~ +85
Soldering temp. ^{CCCCCCCCCCCCCCÊ­2}
Tsol.
260.
Ê­1_{.Duty ratio = 1/100, pulse width=0.1ms.}
Ê­2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
(Ta=25)
Unit
C
EC
AC
C
°CC
°CC
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
V_FC
I_RC
Ct
Ie
p^C
C

tr/tf
Cut off frequency
*3
fc
*3_{. 10logPo(fc MHz)/Po(0.1 MHz)=-3}
Conditions
I_F=50 EC
V_R=4VC
f=1 C
I_F=50 EC
I_F=50 EC
I_F=50 C
I_F=50 C
I_F=50 C
I_FʺʲD ECEEC
ʮDD EC ʰ C
Min.
C
C
40
C
C
C
C
C
Typ.
1.5
C
20
100
850
45
±10
25/13
14
(Ta=25)
Max. Unit
2.0
V
10
µEC
C
C
/
C
C
C
C
C
deg.
C
ns
C
MHz
5