OPE5194WK Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – GAAIAS INFRARED EMITTER

GaAlAs Infrared Emitter
OPE5194WK
The OPE5194WK is GaAlAs infrared emitting diode
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame.
DIMENSIONS (Unit : mm)
FEATURES
• High-output power
• Narrow beam angle
• Available for pulse operating
2- 0.5
APPLICATIONS
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
2.5
Anode
Cathode
STORAGE
Tolerance : ±0.2mm
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
P_D
150
Forward current
I_F
100
Pulse forward current
1
I_FP
1.0
Reverse voltage
V_R
5.0
Operating temp.
Topr.
-25~ +85
Soldering temp.
2 _Tsol.
260.
1_{.Duty ratio = 1/100, pulse width=0.1ms.}
2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
(Ta=25°C )
Unit
A
°C
°C
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol
Forward voltage
V_F
Reverse current
I_R
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p
Spectral bandwidth 50%
Half angle
Conditions
I_F =100mA
V_R= 5V
f = 1MHz
I_F=100mA
I_F= 50mA
I_F= 50mA
I_F=100mA
(Ta=25°C)
Min. Typ. Max. Unit
1.4
1.7
V
10
µA
20
pF
100
mW/
940
nm
45
nm
±10
deg.
27